Semiconductor structure including a split gate nonvolatile memory cell and a high voltage transistor, and method for the formation thereof

ABSTRACT

A semiconductor structure includes a split gate nonvolatile memory cell and a high voltage transistor. The nonvolatile memory cell includes an active region, a nonvolatile memory stack provided above the active region, a control gate electrode provided above the memory stack, a select gate electrode at least partially provided above the active region adjacent to the memory stack and a select gate insulation layer. The high voltage transistor includes an active region, a gate electrode and a gate insulation layer provided between the active region and the gate electrode. The select gate insulation layer of the nonvolatile memory device and the gate insulation layer of the high voltage transistor are at least partially formed of a same high-k dielectric material. The select gate electrode of the nonvolatile memory device and the gate electrode of the high voltage transistor are at least partially formed of a same metal.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Generally, the present disclosure relates to the field of integratedcircuits, and, more particularly, to integrated circuits includingnonvolatile memory devices.

2. Description of the Related Art

Nonvolatile memory, such as, for example, flash memory, may be used invarious storage devices, such as, for example, secure digital memorycards (SD cards), USB sticks, solid state drives (SSDs), and internalmemory of various electronic devices, such as, for example, mobilephones, tablet computers, media players, etc. Further applications ofnonvolatile memory include embedded systems, such as microcontrollers,wherein a nonvolatile memory device may be integrated on a samesemiconductor structure as other circuitry of a microcontroller, suchas, for example, volatile memory, a CPU and/or input/output devices.

Types of nonvolatile memory devices include split gate nonvolatilememory devices, which may provide advantages in reliability andperformance over other types of nonvolatile memory, such as, forexample, control gate nonvolatile memory.

Split gate nonvolatile memory devices are described, for example, inU.S. Patent Publication No. 2012/0241839 and U.S. Pat. Nos. 7,923,769,7,732,278, 8,173,505 and 8,263,463.

Split gate nonvolatile memory devices may include a plurality of splitgate nonvolatile memory cells, which are typically arranged in an arrayand are electrically connected to electrically conductive linesextending along columns and rows of the array. The electricallyconductive lines may be used for programming, erasing and/or reading thesplit gate nonvolatile memory cells. Each split gate nonvolatile memorycell may include an active region formed in a semiconductor material,such as, for example, silicon. The active region may include a sourceregion, a drain region and a channel region that is arranged between thesource region and the drain region. The channel region may be dopedinversely to the doping of the source region and the drain region. Forexample, the source and drain regions may be N-doped, and the channelregion may be provided in a P-well that is provided in the semiconductormaterial, and may have a P-type doping corresponding to the doping ofthe P-well.

Above the channel region, a control gate electrode and a select gateelectrode may be provided adjacent each other. Between the control gateelectrode and the channel region, a nonvolatile memory stack may beprovided, and a select gate insulation layer may be provided between theselect gate electrode and the channel region. The select gate electrodemay be arranged at the drain side of the channel region, and the controlgate electrode may be arranged at the source side of the channel region.The nonvolatile memory stack may include a charge storage layer that mayinclude silicon or silicon nitride and is separated from the controlgate electrode and the channel region by isolation layers formed of anelectrically insulating material, such as silicon dioxide.

Due to the electrical isolation of the charge storage layer that isprovided by the isolation layers, electrical charge may be stored for arelatively long time in the charge storage layer, wherein the amount ofcharge in the charge storage layer may represent data stored in thesplit gate nonvolatile memory cell.

The select gate electrode and the control gate electrode may beelectrically insulated from each other, wherein the electricalinsulation between the select gate electrode and the control gateelectrode may be provided by a portion of the nonvolatile memory stack,as described, for example, in U.S. Patent Publication No. 2012/0241839and U.S. Pat. Nos. 7,923,769, 8,173,505 and 8,263,463, or by a sidewallspacer as described in U.S. Pat. No. 7,732,278.

For reading data from the split gate nonvolatile memory cell, the sourceregion may be grounded, and relatively small positive voltages of, forexample, about 1 V may be applied to the select gate electrode, thecontrol gate electrode and the drain. The channel region between thesource region and the drain region may be influenced by the electricalcharges stored at the charge storage layer, so that a current that isrepresentative of the data stored in the split gate nonvolatile memorycell flows between the drain region and source region of the split gatenonvolatile memory cell.

For programming split gate nonvolatile memory cells, a source sideinjection of charge carriers into the charge storage layer may beperformed. For this purpose, the drain region of the split gatenonvolatile memory cell may be grounded, a relatively high positivevoltage of, for example, about 4 V may be applied to the source region,and an even higher positive voltage, for example a voltage in a rangefrom about 6-9 V, may be applied to the control gate electrode. Avoltage slightly greater than the threshold voltage of the channelregion of the split gate nonvolatile memory cell may be applied to theselect gate electrode.

The split gate nonvolatile memory cell may be erased by Fowler-Nordheimtunneling. For this purpose, a negative bias may be applied between thecontrol gate electrode and the source and drain regions. For example, arelatively high negative voltage of, for example, about −6 V may beapplied to the control gate electrode, and a relatively high positivevoltage of, for example, about 6 V may be applied to each of the sourceregion and the drain region. A relatively high positive voltage of, forexample, about 5 V may be applied to the select gate electrode.

Known split gate nonvolatile memory devices may have issues associatedtherewith. For example, in some split gate nonvolatile memory devices,the control gate electrode and the select gate electrode may be providedby polysilicon layers that partially overlap with each other. In thiscase, any misalignment of these layers may result in decreasedperformance and yield. Select gate insulation layers formed of silicondioxide and select gate electrodes formed of polysilicon may providelimited possibilities for reducing the size of the split gatenonvolatile memory cells. Using portions of the nonvolatile memory stackfor separating the select gate electrode and the control gate electrodemay reduce the possibilities for reducing the size of the split gatenonvolatile memory cells. Moreover, split gate nonvolatile memory celldesigns may have issues related to the integration of split gatenonvolatile memory cells with logic transistors that are provided in thesame semiconductor structure.

In view of the situation described above, the present disclosure relatesto a semiconductor structure and a method for the formation thereof,wherein some or all of the above-mentioned issues are overcomesubstantially completely or at least partially.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

An illustrated semiconductor structure disclosed herein includes a splitgate nonvolatile memory cell and a high voltage transistor. The splitgate nonvolatile memory cell includes an active region, a nonvolatilememory stack provided above the active region, a control gate electrodeprovided above the nonvolatile memory stack, a select gate electrode atleast partially provided above the active region adjacent to thenonvolatile memory stack, and a select gate insulation layer. The highvoltage transistor includes an active region, a gate electrode and agate insulation layer provided between the active region and the gateelectrode. The select gate insulation layer of the split gatenonvolatile memory cell and the gate insulation layer of the highvoltage transistor are at least partially formed of a same high-kdielectric material. The select gate electrode of the split gatenonvolatile memory cell and the gate electrode of the high voltagetransistor are at least partially formed of a same metal.

Another illustrated semiconductor structure disclosed herein includes asplit gate nonvolatile memory cell and a high voltage transistor. Thesplit gate nonvolatile memory cell includes an active region, anonvolatile memory stack provided above the active region, a controlgate electrode provided above the nonvolatile memory stack, a selectgate electrode at least partially provided above the active regionadjacent to the nonvolatile memory stack, and a select gate insulationlayer. The high voltage transistor includes an active region, a gateelectrode and a gate insulation layer provided between the active regionand the gate electrode. The select gate insulation layer of the splitgate nonvolatile memory cell and the gate insulation layer of the highvoltage transistor are at least partially formed of a same high-kdielectric material. The select gate insulation layer of the split gatenonvolatile memory cell and the gate insulation layer of the highvoltage transistor are at least partially formed of a same high-kdielectric material. Each of the select gate insulation layer of thesplit gate nonvolatile memory cell and the gate insulation layer of thehigh voltage transistor includes a first gate insulation layerarrangement comprising one or more sub-layers. For each of thesub-layers of the first gate insulation layer arrangement of the selectgate insulation layer, there is a corresponding sub-layer formed of asame material in the gate insulation layer of the high voltagetransistor. The gate insulation layer of the high voltage transistorfurther includes a layer of a dielectric material arranged between thefirst gate insulation layer arrangement and the active region of thehigh voltage transistor. The select gate electrode of the split gatenonvolatile memory cell and the gate electrode of the high voltagetransistor are at least partially formed of a same metal.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIGS. 1a-6a show schematic cross-sectional views of a first portion of asemiconductor structure according to an embodiment in stages of a methodof manufacturing a semiconductor structure according to an embodiment;

FIGS. 1b-6b show schematic cross-sectional views of a second portion ofthe semiconductor structure illustrated in FIGS. 1a-6a in the stages ofthe method of manufacturing the semiconductor structure illustrated inFIGS. 1a -6 a;

FIGS. 7a and 8a show schematic cross-sectional views of a first portionof a semiconductor structure according to an embodiment in stages of amethod of manufacturing a semiconductor structure according to anembodiment; and

FIGS. 7b and 8b show schematic cross-sectional views of a second portionof the semiconductor structure illustrated in FIGS. 7a and 8a in thestages of the method of manufacturing the semiconductor structureillustrated in FIGS. 7a and 8 a.

While the subject matter disclosed herein is susceptible to variousmodifications and alternative forms, specific embodiments thereof havebeen shown by way of example in the drawings and are herein described indetail. It should be understood, however, that the description herein ofspecific embodiments is not intended to limit the invention to theparticular forms disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Various illustrative embodiments of the invention are described below.In the interest of clarity, not all features of an actual implementationare described in this specification. It will of course be appreciatedthat in the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The present disclosure will now be described with reference to theattached figures. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present disclosure with details which arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present disclosure. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e., adefinition that is different from the ordinary or customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definitionshall be expressively set forth in the specification in a definitionalmanner that directly and unequivocally provides the special definitionfor the term or phrase.

The present disclosure provides embodiments that can allow anintegration of the manufacturing of split gate nonvolatile memorydevices into process flows for manufacturing logic transistors thatinclude high-k gate insulation layers and metal gate electrodes with arelatively small or substantially no impact on characteristics of thelogic transistors. In particular, the control gate electrode and thenonvolatile memory stack of nonvolatile memory cells may be formed priorto the formation of logic transistors, so that processes employed forthe formation of the control gate electrode and the nonvolatile memorystack substantially do not affect components of the logic transistors.

Embodiments may provide split gate nonvolatile memory cells having aselect gate insulation layer including a high-k dielectric material anda select gate electrode including a metal. The select gate insulationlayer and/or the select gate electrode may be formed at least partiallyby the same process steps as gate insulation layers and gate electrodesof logic transistors, which may also help to reduce the complexity andthe costs of the manufacturing process.

In some embodiments, a dielectric material between the control gateelectrode and the select gate electrode of the split gate nonvolatilememory cells may be formed by the same process steps as gate insulationlayers of logic transistors, and may be scaled and modified in the sameway as gate insulation layers of logic transistors. Thus, a way to scaleand improve the dielectric material between the control gate electrodeand the select gate electrode may be provided.

In some embodiments, high voltage transistors that may, in particular,be used for providing relatively high voltages that are employed forprogramming and erasing split gate nonvolatile memory cells in the splitgate nonvolatile memory device may be formed with a gate insulationlayer including a high-k dielectric material and a metal gate electrode,which may help to improve the performance and characteristics of thehigh voltage transistors. Common process steps may be employed forforming portions of the select gate insulation layer, and gateinsulation layers of logic transistors as well as high voltagetransistors, and common process steps may be employed for forming selectgate electrodes of split gate nonvolatile memory devices as well as gateelectrodes of high voltage transistors and logic transistors.

In methods of manufacturing a semiconductor structure according to someembodiments, a dielectric layer, for example a layer of silicon dioxide,from which portions of gate insulations layers of high voltagetransistors will be formed in later process steps, may be grown.Thereafter, an etch stop layer, which may, for example, include siliconnitride, may be deposited. Then, the dielectric layer and the etch stoplayer may be removed from an area of a split gate nonvolatile memorydevice, and a bottom isolation layer, a charge storage layer and a topisolation layer of a nonvolatile memory stack may be deposited. Thebottom isolation layer and the top isolation layer may include silicondioxide, and the charge storage layer may include silicon or siliconnitride. In embodiments wherein the charge storage layer includessilicon, after the deposition of the charge storage layer, an annealingstep may be performed to form silicon nanocrystals. After the depositionof the top isolation layer, a further annealing process and a depositionof a polysilicon layer may be performed. Thereafter, a hardmask, forexample a silicon nitride hardmask, may be deposited.

Then, processes of photolithography and etching may be performed to forma control gate electrode of a split gate nonvolatile memory cell fromthe polysilicon layer, and to form a nonvolatile memory stack of thenonvolatile memory cell from the bottom isolation layer, the chargestorage layer and the top isolation layer. In the etching of thepolysilicon layer, the bottom isolation layer, the charge storage layerand/or the top isolation layer, the hardmask may be employed forprotecting portions of the layers from which the nonvolatile memorystack and the control gate electrode are to be formed. The etch stoplayer may be used for protecting the dielectric layer therebelow frombeing affected by the etch process, and it may be removed, for example,by means of another etch process wherein a different etch chemistry isemployed, after the formation of the nonvolatile memory stack and thecontrol gate electrode.

After the formation of the dielectric layer of the high voltagetransistors, the nonvolatile memory stack and the control gateelectrode, logic transistors, that may include core transistors as wellas input/output transistors, may be formed. Since the logic transistorsare formed after the formation of the dielectric layer of the highvoltage transistors, the nonvolatile memory stack and the control gateelectrode, the logic transistors are not affected by the thermal budgetof processes employed for the formation of these features. In theformation of the logic transistors, areas of the split gate nonvolatilememory cell and the high voltage transistors may be covered by a high-kmetal gate stack, that may also be employed for the formation ofportions of the gate insulation layers and the gate electrodes of highvoltage transistors, as well as for the formation of the select gateelectrodes of the nonvolatile memory cells.

Using the same process steps, the gate etches of the high voltagetransistors and the logic transistors may be performed. The select gateelectrode may be formed from the high-k metal gate stack in separatesteps of photolithography and etching, which may be helpful foraddressing issues related to the limited depth of focus ofphotolithography and the topology of the nonvolatile memory stack andthe control gate electrode. Thereafter, processes in accordance withprocess flows for forming logic transistors and other components of thesemiconductor structure, such as, for example, a formation of interlayerdielectrics, contact structures and electrically conductive lines, maybe performed.

FIGS. 1a and 1b show schematic cross-sectional views of differentportions of a semiconductor structure 100 in a stage of a method ofmanufacturing the semiconductor structure 100. FIGS. 1a and 1b show theportions of the semiconductor structure 100 at the same point of themanufacturing process. Schematic cross-sectional views of the portion ofthe semiconductor structure 100 shown in FIG. 1a in later stages of themanufacturing process are shown in FIGS. 2a, 3a, 4a, 5a and 6a , andschematic cross-sectional views of the portion of the semiconductorstructure 100 shown in FIG. 1b in later stages of the manufacturingprocess are shown in FIGS. 2b, 3b, 4b, 5b and 6b . Each of FIGS. 1a to6b is labeled by a number and a letter, wherein figures labeled by thesame number show views at the same point of the manufacturing process,and figures labeled by the same letter show the same portion of thesemiconductor structure 100.

The semiconductor structure 100 may include a substrate 101. Thesubstrate 101 may be a bulk semiconductor substrate, for example, asilicon wafer or die. In other embodiments, the substrate 101 may be asemiconductor-on-insulator (SOI) substrate including a layer of asemiconductor material, for example a silicon layer, that is providedabove a substrate base, for example a silicon wafer or die, andseparated therefrom by an electrically insulating layer, for example asilicon dioxide layer. The electrically insulating layer may provideelectrical insulation between the semiconductor layer and the substratebase.

As shown in FIG. 1a , the semiconductor structure 100 may include anonvolatile memory cell area 107, wherein a split gate nonvolatilememory cell will be formed, a high voltage N-channel transistor area108, wherein a high voltage N-channel transistor will be formed, and ahigh voltage P-channel transistor area 109, wherein a high voltageP-channel transistor will be formed.

As shown in FIG. 1b , the semiconductor structure 100 may furtherinclude a core N-channel transistor area 110 and a core P-channeltransistor area 111, wherein a core N-channel transistor and a coreP-channel transistor, respectively, of a logic circuit will be formed,and an input/output N-channel transistor area 112 and an input/outputP-channel transistor area 113, wherein an input/output N-channeltransistor and an input/output P-channel transistor, respectively, ofthe logic circuit will be formed.

The semiconductor structure 100 may further include a trench isolationstructure 102 that may be used for providing electrical insulationbetween the circuit elements to be formed in the areas 107 to 113, andbetween these circuit elements and other circuit elements (not shown) ofthe semiconductor structure 100. The trench isolation structure 102 maybe a shallow trench isolation structure including a plurality oftrenches formed in the substrate 101 that are filled with anelectrically insulating material, for example silicon dioxide.

The semiconductor structure 100 may further include a deep N-well 103that includes the nonvolatile memory cell area 107, the high voltageN-channel transistor area 108 and the high voltage P-channel transistorarea 109. The deep N-well 103 may be doped with an N-type dopant suchas, for example, arsenic.

In the nonvolatile memory cell area 107, a nonvolatile memory cell well104 may be provided. In some embodiments, the nonvolatile memory cellwell 104 may be doped with a P-type dopant such as, for example, boron.In the high voltage N-channel transistor area 108, a high voltage P-well105 that is doped with a P-type dopant may be provided, and a highvoltage N-well 106 that is doped with an N-type dopant may be providedin the high voltage P-channel transistor area 109.

At the stage of the manufacturing process illustrated in FIGS. 1a and 1b, the areas 110 to 113 wherein transistors of the logic circuit are tobe formed may be substantially undoped, or they may be doped inaccordance with the original doping of the substrate 101.

The above-described features may be formed as follows.

The trench isolation structure 102 may be formed by means of techniquesfor forming shallow trench isolation structures, including processes ofphotolithography and etching for forming trenches in the substrate 101,and processes of oxidation, deposition and/or polishing for filling thetrenches with an electrical insulating material, such as silicondioxide, and for removing portions of the electrically insulatingmaterial outside the trenches. The deep N-well 103 may be formed bymeans of an ion implantation process, wherein the semiconductorstructure 100 is irradiated with ions of an N-type dopant. Portions ofthe semiconductor structure 100 wherein no deep N-well is to be formed,such as, for example, the areas 110 to 113 shown in FIG. 1b , may becovered by a mask, for example, a photoresist mask, that absorbs ions,so that portions below the photoresist mask are protected from beingirradiated with ions.

The nonvolatile memory cell well 104 and the high voltage P-well 105 maybe formed by means of one or more ion implantation processes wherein thesemiconductor structure 100 is irradiated with ions of a P-type dopant.In some embodiments, the nonvolatile memory cell well 104 and the highvoltage P-well 105 may be formed in a common ion implantation process.In other embodiments, separate ion implantation processes may beemployed for providing different dopant concentrations and/or differentdepths of the nonvolatile memory cell well 104 and the high voltageP-well 105. The high voltage N-well 106 may be formed by means of an ionimplantation process wherein the semiconductor structure 100 isirradiated with ions of an N-type dopant.

Similar to the ion implantation process employed for forming the deepN-well 103, in the ion implantation processes performed for forming thenonvolatile memory cell well 104, the high voltage P-well 105 and thehigh voltage N-well 106, portions of the semiconductor structure 100wherein no ions are to be implanted may be covered by a mask, forexample, a photoresist mask.

The present disclosure is not limited to embodiments wherein thenonvolatile memory cell well 104, the high voltage P-well 105 and thehigh voltage N-well 106 are formed at the stage of the manufacturingprocess shown in FIGS. 1a and 1b . In other embodiments, the nonvolatilememory cell well 104, the high voltage P-well 105 and the high voltageN-well 106 may be formed at a later stage of the manufacturing process,as will be described below.

FIGS. 2a and 2b show schematic cross-sectional views of portions of thesemiconductor structure 100 at a later stage of the manufacturingprocess. A dielectric layer 201 may be formed over the semiconductorstructure 100, wherein portions of the dielectric layer 201 may beprovided directly on the semiconductor material of the transistor areas108 to 113. On the dielectric layer 201, an etch stop layer 202 may beformed. The etch stop layer 202 may include a material having differentetch characteristics than the material of the dielectric layer 201, sothat the material of the dielectric layer 201 may be etched selectivelywith respect to the material of the etch stop layer 202, and thematerial of the etch stop layer 202 may be etched selectively withrespect to the material of the dielectric layer 201. In someembodiments, the dielectric layer 201 may include silicon dioxide andthe etch stop layer 202 may include silicon nitride.

In embodiments wherein the nonvolatile memory cell well 104 is notformed before the formation of the dielectric layer 201 and the etchstop layer 202, an ion implantation process for forming the nonvolatilememory cell well 104 may be performed, for example, after the formationof the dielectric layer 201 and before the formation of the etch stoplayer 202.

The dielectric layer 201 may be formed by means of known depositiontechniques, such as chemical vapor deposition and/or plasma enhancedchemical vapor deposition. In embodiments wherein the dielectric layer201 includes silicon dioxide, and the substrate 101 includes silicon,the dielectric layer 201, or portions thereof, may alternatively beformed by techniques of oxidation such as, for example, a hightemperature processing of the semiconductor structure 100 that isperformed in an oxidizing ambient.

After the formation of the etch stop layer 202, a mask, for example aphotoresist mask, (not shown) may be formed over the semiconductorstructure 100 using techniques of photolithography. The mask may coverthe transistor areas 108 to 113, but not the nonvolatile memory cellarea 107, so that portions of the etch stop layer 202 formed over thenonvolatile memory cell area 107 are exposed at the surface of thesemiconductor structure 100.

Then, one or more etch processes adapted for removing the materials ofthe dielectric layer 201 and the etch stop layer 202 may be performedfor exposing the semiconductor material of the nonvolatile memory cellarea 107. Portions of the dielectric layer 201 and the etch stop layer202 over the transistor areas 108 to 113 may be protected by the maskduring the one or more etch processes, so that they are not removed andremain in the semiconductor structure 100. Thereafter, the mask may beremoved, for example, by means of a resist strip process.

Then, a nonvolatile memory stack 206 may be formed over thesemiconductor structure 100. The nonvolatile memory stack 206 mayinclude a bottom isolation layer 203, a charge storage layer 204 that isprovided on the bottom isolation layer 203 and a top isolation layer 205that is provided on the charge storage layer 204. The bottom isolationlayer 203 and the top isolation layer 205 may include an electricallyinsulating material such as, for example, silicon dioxide. The chargestorage layer 204 may include an electrically insulating material thatis different from the material of the bottom isolation layer 203 and thetop isolation layer 205. In embodiments wherein the bottom isolationlayer 203 and the top isolation layer 205 include silicon dioxide, thecharge storage layer 204 may include silicon nitride. However, thecharge storage layer 204 need not include an electrically insulatingmaterial. In other embodiments, the charge storage layer 204 may includesilicon, wherein the silicon may, for example, be provided in the formof silicon nanocrystals.

The bottom isolation layer 203, the charge storage layer 204 and the topisolation layer 205 of the nonvolatile memory stack 206 may be formed bymeans of deposition processes such as, for example, chemical vapordeposition, plasma enhanced chemical vapor deposition and/or physicalvapor deposition. In some embodiments, the formation of the bottomisolation layer 203 may, additionally or alternatively to a depositionprocess, include an oxidation process. In embodiments wherein the chargestorage layer 204 includes silicon, the formation of the charge storagelayer 204 may include an annealing process in addition to a depositionprocess. For example, a layer of amorphous silicon may be deposited onthe bottom isolation layer 203, and an annealing process may beperformed for forming nanocrystalline silicon from the amorphoussilicon.

After the formation of the top isolation layer 205, an annealing processmay be performed for improving a quality of an interface between thecharge storage layer 204 and the top isolation layer 205, which may beparticularly helpful in embodiments wherein the charge storage layer 204includes nanocrystalline silicon.

On the nonvolatile memory stack 206, a layer 207 of a control gatematerial may be deposited. In some embodiments, the control gatematerial 207 may include polycrystalline silicon and may be formed bymeans of techniques of chemical vapor deposition and/or plasma enhancedchemical vapor deposition. The polycrystalline silicon of the layer 207may be doped for improving the electrical conductivity of the material.

On the layer 207 of control gate material, a layer 208 of a hardmaskmaterial, for example a layer of silicon nitride, may be deposited, forexample, by means of chemical vapor deposition and/or plasma enhancedchemical vapor deposition.

FIGS. 3a and 3b show schematic cross-sectional views of thesemiconductor structure 100 in a later stage of the manufacturingprocess. After the formation of the nonvolatile memory stack 206, thelayer 207 of control gate material and the layer 208 of hardmaskmaterial, the layer of hardmask material may be patterned by means oftechniques of photolithography and etching to form a hardmask at alocation at which a control gate electrode 301 is to be provided in thenonvolatile memory cell area 107. Then, one or more etch processes maybe performed for removing portions of the layer 207 of control gatematerial and the nonvolatile memory stack 206 that are not covered bythe hardmask. In doing so, the control gate electrode 301 is formed. Aportion of the nonvolatile memory stack 206 between the control gateelectrode 301 and the nonvolatile memory cell well 104 remains in thesemiconductor structure 100. Additionally, the hardmask 208 may remainin the semiconductor structure 100 and may provide a cap layer 302 ofthe control gate electrode 301.

In the one or more etch processes that are performed for forming thecontrol gate electrode 301 and portions of the nonvolatile memory stack206 other than those below the control gate electrode 301, the etch stoplayer 202 may protect the dielectric layer 201 from being affected byetchants used for etching the control gate electrode 301 and thenonvolatile memory stack 206, in particular from an etchant used forremoving the bottom isolation layer 203 of the nonvolatile memory stack206, which, in some embodiments, may be formed of substantially the samematerial (for example, silicon dioxide) as the dielectric layer 201.

After these etch processes, an oxidation process may be performed forforming a dielectric layer 303. The dielectric layer 303 may cover thecontrol gate electrode 301 and portions of the nonvolatile memory cellwell 104 adjacent the control gate electrode 301. The dielectric layer303 may be formed by means of an oxidation process wherein a hightemperature processing of the semiconductor structure 100 is performedin an oxidizing ambient. In the oxidation process, portions of thepolysilicon of the control gate electrode 301 and the siliconsemiconductor material of the nonvolatile memory cell well 104 may reactchemically with the oxidizing ambient, wherein silicon dioxide isformed.

Then, the etch stop layer 202 may be removed, which may be done by meansof an etch process adapted to selectively remove the material of theetch stop layer 202 relative to the materials of the dielectric layer201 and the dielectric layer 303.

After the removal of the etch stop layer 202, a core transistor P-well304 may be formed in the core N-channel transistor area 110, a coretransistor N-well 305 may be formed in the core P-channel transistorarea 111, an input/output transistor P-well 306 may be formed in theinput/output N-channel transistor area 112, and an input/outputtransistor N-well 307 may be formed in the input/output P-channeltransistor area 113.

The wells 304, 305, 306, 307 may be formed by means of a plurality ofion implantation processes. In each implantation process, portions ofthe semiconductor structure 100 wherein no ions are to be implanted maybe covered by a mask, for example, a photoresist mask. In particular,the nonvolatile memory cell area 107, the high voltage N-channeltransistor area 108 and the high voltage P-channel transistor area 109may be covered by a mask.

In some embodiments, separate ion implantation processes may beperformed for introducing dopants into the core transistor P-well 304and the input/output transistor P-well 306, respectively, and separateion implantation processes may be performed for introducing dopants intothe core transistor N-well 305 and the input/output transistor N-well307, respectively. Thus, different dopant concentrations and/ordifferent depths of the wells 304, 305, 306, 307 may be provided in coretransistors and input/output transistors of the same type (P-channel andN-channel, respectively).

In other embodiments, the core transistor P-well 304 and theinput/output transistor P-well 306 may be formed in a common ionimplantation process, and the core transistor N-well 305 and theinput/output transistor N-well 307 may be formed in a common ionimplantation process. This may allow a reduction in the number ofphotolithography and ion implantation processes that are required in theformation of the semiconductor structure 100.

In embodiments wherein the high voltage P-well 105 and the high voltageN-well 106 are not formed before the formation of the dielectric layer201, as described above, the high voltage P-well 105 and the highvoltage N-well 106 may also be formed after the removal of the etch stoplayer 202. Furthermore, one or more ion implantation processes foradjusting the threshold voltage of transistors in static random accessmemory (SRAM) areas (not shown) of the semiconductor structure 100 maybe performed at this stage of the manufacturing process.

FIGS. 4a and 4b show schematic cross-sectional views of thesemiconductor structure 100 at a later stage of the manufacturingprocess. Layers 401, 402 of a stress-creating material may be providedin the core P-channel transistor area 111 and the input/output P-channeltransistor area 113, respectively. The layers 401, 402 ofstress-creating material may be formed of a material having a greaterlattice constant than the semiconductor material of the substrate 101.In embodiments wherein the substrate includes silicon, the layers 401,402 of stress-creating material may include silicon/germanium. Due tothe greater lattice constant of the material of the layers 401, 402 ofstress-creating material, a compressive stress may be formed in thelayers 401, 402 of stress-creating material, which may help to improvethe mobility of holes in the channel regions of the P-channeltransistors to be formed in the core P-channel transistor area 111 andthe input/output P-channel transistor area 113.

For forming the layers 401, 402 of stress-creating material, a mask (notshown), for example a photoresist mask covering portions of thesemiconductor structure 100 other than the core P-channel transistorarea 111 and the input/output P-channel transistor area 113, may beformed, for example, by means of photolithography. Then, an etch processadapted to remove the material of the dielectric layer 201 may beperformed to expose the semiconductor material of the substrate 101 inthe core P-channel transistor area 111 and the input/output P-channeltransistor area 113. Then, an etch process adapted to remove thesemiconductor material of the substrate 101 may be performed to formrecesses in the core P-channel transistor area 111 and the input/outputP-channel transistor area 113. The mask may be removed, and a selectiveepitaxial growth process may be performed for selectively depositing thelayers 401, 402 of stress-creating material on the exposed semiconductormaterial of the core P-channel transistor area 111 and the input/outputP-channel transistor area 113. The selective epitaxial growth processemployed for depositing the material of the layers 401, 402 ofstress-creating material may be adapted such that substantially nodeposition of material is obtained on the dielectric layers 201, 303, oronly a small amount of material is deposited on the dielectric layers201, 303. The selective epitaxial growth process may include a chemicalvapor deposition process, a plasma enhanced chemical vapor depositionprocess and/or physical vapor deposition process adapted for selectiveepitaxial deposition of silicon/germanium.

After the formation of the layers 401, 402 of stress-creating material,the dielectric layer 201 may be removed from the core N-channeltransistor area 110 and the input/output N-channel transistor area 112.In some embodiments, the dielectric layer 303, or at least portionsthereof, may be removed from the nonvolatile memory cell area 107. Forexample, portions of the dielectric layer 303 may be removed fromportions of the nonvolatile memory cell well 104 adjacent the controlgate electrode 301, whereas portions of the dielectric layer 303 on thecontrol gate electrode 301 may remain in the semiconductor structure.For removing the dielectric layer 303 or portions thereof, a mask, forexample, a photoresist mask, may be formed that covers the high voltageN-channel transistor area 108 and the high voltage P-channel transistorarea 109, wherein the mask does not cover those portions of thesemiconductor structure 100 from which the dielectric layer 201 and,optionally, the dielectric layer 303 are to be removed. Then, an etchprocess may be performed for removing the dielectric material of thelayers 201, 303, for example, an etch process adapted to remove silicondioxide.

Thereafter, dielectric layers 403, 404 may be formed, wherein thedielectric layer 403 may cover portions of the nonvolatile memory cellwell 104 adjacent the control gate electrode 301, the core transistorP-well 304 and the core transistor N-well 305. The dielectric layer 404may cover the input/output transistor P-well 306 and the input/outputtransistor N-well 307.

For forming the dielectric layers 403, 404, a first oxidation processmay be performed wherein portions of the material of the substrate 101exposed at the surface of the semiconductor structure 100 are oxidized.Then, a mask covering portions of the semiconductor structure 100 otherthan the core N-channel transistor area 110, the core P-channeltransistor area 111 and the nonvolatile memory cell area 107 may beformed by means of a photolithography process. Then, an etch process forremoving portions of the dielectric layer 403 from the nonvolatilememory cell area 107, the core N-channel transistor area 110 and thecore P-channel transistor area 111 may be performed. Thereafter, afurther oxidation process may be performed for forming the dielectriclayer 403. As an alternative to forming the dielectric layers 403, 404by means of an oxidation process, one or both of the layers 403, 404 maybe formed by means of a deposition process such as chemical vapordeposition and/or plasma-enhanced chemical vapor deposition.

At the stage of the manufacturing process shown in FIGS. 4a and 4b , thenonvolatile memory cell area 107, the core N-channel transistor area 110and the core P-channel transistor area 111 may be covered with thedielectric layer 403, the input/output N-channel transistor area 112 andthe input/output P-channel transistor area 113 may be covered by thedielectric layer 404, and the high voltage N-channel transistor area 108and the high voltage P-channel transistor area 109 may be covered by thedielectric layer 201. The dielectric layers 201, 403, 404 may be formedof substantially the same material, for example, silicon dioxide.However, the dielectric layers 201, 403, 404 may have differentthicknesses. In particular, the dielectric layer 201 may be thicker thanthe dielectric layer 404, and the dielectric layer 404 may be thickerthan the dielectric layer 403.

As will be explained in more detail below, the dielectric layers 201,403, 404 may be used for forming portions of a gate insulation layer oftransistors formed in the areas 108 to 113. Thus, by providingdielectric layers 201, 403, 404 having different thicknesses, gateinsulation layers having a different thickness may be formed, inaccordance with operating voltages of the respective transistors. In thehigh voltage N-channel transistor area 108 and the high voltageP-channel transistor area 109, high voltage transistors that may be usedfor providing voltages employed for programming and erasing thenonvolatile memory cell to be formed in the nonvolatile memory cell area107 may be formed, wherein the voltage applied in the programming anderasing of the memory cell may be greater than voltages of operation ofthe logic transistors formed in the transistor areas 110 to 113. Theinput/output transistors formed in areas 112, 113 may have a greatervoltage of operation than the core transistors formed in transistorareas 110, 111. A greater thickness of the respective dielectric layermay be helpful for providing a gate insulation layer that has abreakthrough voltage that is greater than the voltage of operation ofthe respective transistor.

In some embodiments, the dielectric layer 201 may have a thickness in arange from about 100-260 Å. The dielectric layer 403 may have athickness in a range from about 20-30 Å, and the dielectric layer 404may have a thickness in a range from about 60-80 Å.

FIGS. 5a and 5b show schematic cross-sectional views of thesemiconductor structure 100 in a later stage of the manufacturingprocess. After the formation of the dielectric layers 403, 404,electrically insulating layers 501, 502 may be deposited over thesemiconductor structure 100 using processes of chemical vapor depositionand/or plasma-enhanced chemical vapor deposition. In some embodiments,the electrically insulating layer 501 may include silicon dioxide,silicon oxynitride and/or silicon nitride, and the electricallyinsulating layer 502 that is formed over the electrically insulatinglayer 501 may include a high-k material such as, for example, tantalumoxide, strontium titanium oxide, hafnium oxide, hafnium silicon oxideand/or zirconium oxide. Generally, in some embodiments, one or both ofthe electrically insulating layers may include a material having agreater dielectric constant than silicon dioxide, for example adielectric constant greater than about four.

The present disclosure is not limited to embodiments wherein twoelectrically insulating layers 501, 502 are provided. In otherembodiments, a single electrically insulating layer, for example a layerof a high-k material such as tantalum oxide, strontium titanium oxide,hafnium oxide, hafnium silicon oxide, zirconium oxide and the like, maybe provided. In further embodiments, three or more electricallyinsulating layers may be provided, wherein at least one of theelectrically insulating layers includes a high-k material.

After the formation of the electrically insulating layers 501, 502,electrically conductive layers 503, 504, 505 may be formed over thesemiconductor structure 100. The electrically conductive layer 503 maybe provided on the topmost one 502 of the electrically insulating layers501, 502 and may include a metal such as, for example, lanthanum,lanthanum nitride, aluminum, aluminum nitride and/or titanium nitride.In some embodiments, portions of the electrically conductive layer 503provided over P-channel transistor areas 109, 111, 113 and portions ofthe layer 503 provided over N-channel transistor areas 108, 110, 112 andthe nonvolatile memory cell area 107 may be formed of different metals.For example, portions of the electrically conductive layer 503 over thenonvolatile memory cell area 107 and the N-channel transistor areas 108,110, 112 may include lanthanum, lanthanum nitride and/or titaniumnitride, and portions of the electrically conductive layer 503 over theP-channel transistor areas 109, 111, 113 may include aluminum and/oraluminum nitride.

The electrically conductive layer 504 may be, for example, a layer oftitanium nitride, and may provide a cap layer of the electricallyconductive layer 503. The electrically conductive layer 505, which mayhave a greater thickness than the layers 503, 504, may includepolysilicon and may be doped for improving an electrical conductivity ofthe electrically conductive layer 505.

For forming the electrically conductive layers 503, 504, 505, depositionprocesses such as chemical vapor deposition, plasma enhanced chemicalvapor deposition, physical vapor deposition and/or atomic layerdeposition may be employed. In embodiments wherein the electricallyconductive layer 503 includes portions of different materials, theportions of the electrically conductive layer 503 may be depositedsubsequently, and processes of photolithography and etching may beemployed for removing the portions of the electrically conductive layer503 from parts of the semiconductor structure 100, in accordance withtechniques for providing different metals in P-channel and N-channeltransistors that are formed in accordance with high-k metal gatetechniques.

On the electrically conductive layer 505, a dielectric layer 506, forexample a layer of silicon dioxide, may be deposited. This may be doneby means of deposition techniques such as chemical vapor depositionand/or plasma enhanced chemical vapor deposition.

FIGS. 6a and 6b show schematic cross-sectional views of thesemiconductor structure 100 in a later stage of the manufacturingprocess. After the formation of the electrically insulating layers 501,502, the electrically conductive layers 503, 504, 505 and the dielectriclayer 506, the electrically conductive layers 503, 504, 505 may bepatterned. The dielectric layer 506 may be used in the patterningprocess, as will be detailed below. In this patterning process, a selectgate electrode 601 and a select gate insulation layer 608 may be formedover the nonvolatile memory cell area 107, and transistor gateelectrodes 602 to 607 as well as transistor gate insulation layers 609to 614 may be formed over the transistor areas 108 to 113. The selectgate electrode 601 and the transistor gate electrodes 602 to 607 areformed from portions of the electrically conductive layers 503 to 505.

The select gate insulation layer 608 includes a gate insulation layerarrangement 618 that is formed from portions of the electricallyinsulating layers 501, 502 that were formed over the nonvolatile memorycell area 107. Additionally, the select gate insulation layer 608 mayinclude a portion of the dielectric layer 403.

The transistor gate insulation layers 609, 610 formed over the highvoltage transistor areas 108, 109 may include respective gate insulationlayer arrangements 619, 620 that are formed from portions of theelectrically insulating layers 501, 502, and may additionally includeportions of the dielectric layer 201. The gate insulation layers 611,612 formed over the core transistor areas 110, 111 may each include arespective gate insulation layer arrangement 621, 622 formed fromportions of the electrically insulating layers 501, 502, and mayadditionally include portions of the dielectric layer 403. The gateinsulation layers 613, 614 formed over the input/output transistor areas112, 113 may each include a respective gate insulation layer arrangement623, 624 formed from portions of the electrically insulating layers 501,502, and may additionally include portions of the dielectric layer 404.

Since each of the gate insulation layer arrangements 618 to 624 has beenformed from portions of the electrically insulating layers 501, 502, thegate insulation layer arrangements 618 to 624 include correspondingsub-layers. In particular, each of the gate insulation layerarrangements 618 to 624 may include a first sub-layer formed from aportion of the electrically insulating layer 501 and a second sub-layerformed from a portion of the electrically insulating layer 502.

Accordingly, each of the gate insulation layer arrangements 619 to 624of the gate insulation layers 609 to 614 formed over the transistorareas 108 to 113 may include a plurality of sub-layers, wherein for eachof the sub-layers, there is a corresponding sub-layer in the gateinsulation layer arrangement 618 of the select gate insulation layer608.

In embodiments wherein a single electrically insulating layer isprovided instead of the two electrically insulating layers 501, 502 asdescribed above, each of the gate insulation layer arrangements 618 to624 may include a single sub-layer provided by a portion of the singleelectrically insulating layer, wherein the sub-layers have correspondingfeatures due to their formation from the same electrically insulatinglayer.

As detailed above, in some embodiments, portions of the electricallyconductive layer 503 may be formed from different materials. Atoms fromthe electrically conductive layer 503 may diffuse into one or both ofthe electrically insulating layers 501, 502, and may form fixed chargestherein. However, the portion of the electrically conductive layer 503over the nonvolatile memory cell area 107 may have substantially thesame composition as the portions of the electrically conductive layer503 over one of the pair of high voltage transistor areas 108, 109, oneof the pair of core transistor areas 110, 111 and one of the pair ofinput/output transistor areas 112, 113. In particular, the portion ofthe electrically conductive layer 503 over the nonvolatile memory cellarea 107 may have substantially the same composition as portions of theelectrically conductive layer 503 over the high voltage N-channeltransistor area 108, the core N-channel transistor area 110 and theinput/output N-channel transistor area 112. Thus, correspondingsub-layers of the gate insulation layer arrangements 618, 619, 621, 623may have substantially the same material composition.

Due to their formation from portions of the electrically insulatinglayers 501, 502, the corresponding sub-layers of the gate insulationlayer arrangements 618 to 624 may have substantially the same thickness,and the corresponding sub-layers are arranged in the same order in eachof the gate insulation layer arrangements 618 to 624.

As can be seen from FIG. 6a , a portion of the gate insulation layerarrangement 618 of the select gate insulation layer 608 is arrangedbetween the select gate electrode 601 and the control gate electrode301. Thus, the gate insulation layer arrangement 618 may provideelectrical insulation between the select gate electrode 601 and thecontrol gate electrode 301. There is substantially no portion of thenonvolatile memory stack 206 between the control gate electrode 301 andthe select gate electrode 601. Accordingly, electrical insulationbetween the select gate electrode 601 and the control gate electrode 301may be provided independently of the nonvolatile memory stack 206.

For patterning the electrically insulating layers and the electricallyconductive layers 503, 504, 505, processes of photolithography andetching may be employed, wherein a mask, for example a photoresist maskor a hardmask, is formed over the semiconductor structure 100, and oneor more etch processes are performed for removing portions of theelectrically insulating layers 501, 502 and the electrically conductivelayers 503, 504, 505 which are not covered by the mask. In someembodiments, the patterning of the electrically insulating layers andthe electrically conductive layers 503, 504, 505 may include a formationof a first mask and one or more first etching processes for forming thegate electrodes 602 to 607 and the gate insulation layers 609 to 614over the transistor areas 108 to 113, and a formation of a second maskand one or more second etch processes for forming the select gateelectrode 601 and the select gate insulation layer 608.

For protecting the portion of the electrically conductive layer 505 overthe nonvolatile memory cell area 107 during the first etching process,the dielectric layer 506 described above may be used. Before forming thefirst mask and performing the first etch process that are employed forforming the transistor gate electrodes 602 to 607 and the transistorgate insulation layers 609 to 614, portions of the dielectric layer 506over the transistor areas 108 to 113 may be removed, for example, bymeans of processes of photolithography and etching. A portion of thedielectric layer 506 over the nonvolatile memory cell area 107 mayremain in the semiconductor structure during the first etch process.Since the select gate electrode 601 and the select gate insulation layer608 are formed from portions of the electrically insulating layers 501,502 and the electrically conductive layers 503, 504, 505 that arelocated on or close to the control gate electrode 301, the portions ofthe electrically insulating layers 501, 502 and the electricallyconductive layers 503, 504, 505 from which the select gate insulationlayer 608 and the select gate electrode 601 are formed may be located ata greater height above the substrate 101 than the portions of theelectrically insulating layers 501, 502 and the electrically conductivelayers 503, 504, 505 from which the gate insulation layers 609 to 614and the gate electrodes 602 to 607 above the transistor areas 108 to 113are formed. Employing a separate mask and one or more separate etchprocesses for the formation of the select gate insulation layer 608 andthe select gate electrode 601 may help to overcome issues caused by thetopography of the material layers from which the select gate insulationlayer 608 and the select gate electrode 601 are formed and a limiteddepth of focus in photolithography processes that are employed for maskformation.

After the patterning of the electrically insulating layers 501, 502 andthe electrically conductive layers 503, 504, 505, further process stepsmay be performed for forming source and drain extensions, halo regions,source and drain regions and sidewall spacers at each of the areas 107to 113, in accordance with conventional process flows. Thus, anonvolatile memory cell may be formed at the nonvolatile memory cellarea 107, high voltage transistors may be formed at the high voltagetransistor areas 108, 109, core transistors may be formed at the coretransistor areas 110, 111 and input/output transistors may be formed atthe input/output transistor areas 112, 113. Active regions of thesecircuit elements may be provided by the source and drain regions, andportions of the wells between the source and drain regions formingchannel regions.

The present disclosure is not limited to embodiments wherein the selectgate electrode 601 and gate electrodes 602 to 607 are formed before theformation of source and drain regions in the areas 107 to 113, inaccordance with a gate first process, as described above with referenceto FIGS. 1a to 6b . In other embodiments, a gate last processintegration may be employed, as will be described in the following withreference to FIGS. 7a, 7b, 8a and 8 b.

FIGS. 7a and 7b show schematic cross-sectional views of differentportions of a semiconductor structure 700 according to an embodiment ata stage of a manufacturing process according to an embodiment. Schematiccross-sectional views of the portions of the semiconductor structure 700shown in FIGS. 7a and 7b , respectively, at another stage of themanufacturing process are shown in FIGS. 8a and 8b , respectively. FIGS.7a and 7b show the semiconductor structure 700 at a same point of themanufacturing process. FIGS. 8a and 8b show the semiconductor structure700 at a same point of the manufacturing process that is later than thepoint of the manufacturing process shown in FIGS. 7a and 7 b.

For convenience, in FIGS. 1a to 6b , and in FIGS. 7a to 8b , likereference numerals have been used to denote like components, andcorresponding processes may be employed for the formation thereof,unless explicitly stated otherwise.

The semiconductor structure 700 may include a substrate 101. A trenchisolation structure 102 may provide electrical insulation between anonvolatile memory cell area 107, a high voltage N-channel transistorarea 108, a high-voltage P-channel transistor area 109, a core N-channeltransistor area 110, a core P-channel transistor area 111, aninput/output N-channel transistor area 112, an input/output P-channeltransistor area 113, and between the areas 107 to 113 and other areas ofthe semiconductor structure 700 wherein further circuit elements areformed (not shown).

In the substrate 101, a deep N-well 103 may be provided that includesthe nonvolatile memory cell area 107, the high voltage N-channeltransistor area 108 and the high voltage P-channel transistor area 109,but does not include the core N-channel transistor area 110, the coreP-channel transistor area 111, the input/output N-channel transistorarea 112 and the input/output P-channel transistor area 113.

In the nonvolatile memory cell area 107, a nonvolatile memory cell well104 may be provided, in the high-voltage N-channel transistor area 108,a high voltage P-well 105 may be provided, and in the high-voltageP-channel transistor area 109, a high voltage N-well 106 may beprovided. In the core N-channel transistor area 110, a core transistorP-well 304 may be provided, in the core P-channel transistor area 111, acore transistor N-well 305 may be provided, in the input/outputN-channel transistor area 112, an input/output transistor P-well 306 maybe provided, and in the input/output P-channel transistor area 113, aninput/output transistor N-well 307 may be provided. The core P-channeltransistor area 111 and the input/output P-channel transistor area 113may further include a respective one of layers 401, 402 ofstress-creating material.

Above the nonvolatile memory cell well 104, a nonvolatile memory stack206 including a bottom isolation layer 203, a charge storage layer 204and a top isolation layer 205 may be provided. Above the nonvolatilememory stack 206, a control gate electrode 301 covered by a cap layer302 may be provided. Additionally, dielectric layers 201, 303, 403, and404 may be provided.

The above-described features may be formed as described as above withreference to FIGS. 1a to 4b , wherein the dielectric layer 403 mayinitially cover the surface of the nonvolatile memory cell well 104adjacent the control gate electrode 301 and the core transistor wells304, 305, the dielectric layer 404 may initially cover the input/outputtransistor wells 306, 307, and the dielectric layer 201 may initiallycover the surface of the high voltage transistor wells 105, 106.

A dummy select gate electrode 708 and a dummy select gate insulationlayer 701 may be formed over the nonvolatile memory cell area 107, anddummy transistor gate electrodes 709 to 714 and dummy transistor gateinsulation layers 702 to 707 may be formed over the transistor areas 108to 113.

This can be done by depositing a layer of the material of the dummyselect gate insulation layer 701 and the dummy transistor gateinsulation layers 702 to 707, for example a layer of silicon dioxide,and a layer of a material of the dummy select gate electrode 708 and thedummy transistor gate electrodes 709 to 714, for example a layer ofpolysilicon, over the semiconductor structure 700, for example, by meansof processes of chemical vapor deposition and/or plasma enhancedchemical vapor deposition. These layers, and the dielectric layers 201,303, 403, 404, may be patterned by means of processes ofphotolithography and etching, wherein first processes ofphotolithography and etching may be performed for forming the dummytransistor gate insulation layers 702 to 707 and the dummy transistorgate electrodes 709 to 714, and second processes of photolithography andetching may be performed for forming the dummy select gate insulationlayer 701 and the dummy select gate electrode 708, similar to theformation of the select gate electrode 601, the transistor gateelectrodes 602 to 607, the select gate insulation layer 608 and thetransistor gate insulation layers 609 to 614 described above withreference to FIGS. 6a and 6 b.

Thereafter, ion implantation processes may be performed for formingsource and drain extensions and, optionally, halo regions in each of thenonvolatile memory cell area 107 and the transistor areas 108 to 109.Then, sidewall spacers 715 to 722 may be formed at the sidewalls of eachof the control gate electrode 301, the dummy select gate electrode 708and the dummy transistor gate electrodes 709 to 714. This may be done bydepositing a layer of a material of the sidewall spacers 715 to 722 overthe semiconductor structure 700. The layer of sidewall spacer materialmay include, for example, silicon nitride. Then, an anisotropic etchprocess may be performed for removing portions of the layer of sidewallspacer material from substantially horizontal or weakly inclinedportions of the surface of the semiconductor structure 700, whereas, dueto the anisotropy of the etch process, portions of the layer of sidewallspacer material at the sidewalls of the control gate electrode 301, thedummy select gate electrode 708 and the dummy transistor gate electrodes709 to 714 remain in the semiconductor structure 700 and form thesidewall spacers 715 to 722.

Then, ion implantation processes may be performed for forming sourceregions 721 to 727 and drain regions 728 to 734 in the nonvolatilememory cell well 104 and the transistor wells 105, 106 and 304 to 307.

Thereafter, a layer 735 of an interlayer dielectric, for example a layerof silicon dioxide, may be deposited over the semiconductor structure700.

FIGS. 8a and 8b show schematic cross-sectional views of thesemiconductor structure 700 in a later stage of the manufacturingprocess. After the formation of the interlayer dielectric 735, achemical mechanical polishing process may be performed. In the chemicalmechanical polishing process, the surface of the semiconductor structure700 may be planarized. Moreover, the dummy select gate electrode 708 andthe dummy transistor gate electrodes 709 to 714 may be exposed at thesurface of the semiconductor structure 700.

Then, one or more etch processes may be performed for removing the dummyselect gate electrode 708, the dummy transistor gate electrodes 709 to714, the dummy select gate insulation layer 701 and the dummy transistorgate insulation layers 702 to 707. Then, electrically insulating layers501, 502 and electrically conductive layers 503, 504, 505 may bedeposited over the semiconductor structure 700, and a further chemicalmechanical polishing process may be performed for removing portions ofthese layers that were deposited on the surface of the interlayerdielectric 735. Portions of the electrically insulating layers 501, 502and the electrically conductive layers 503, 504, 505 deposited at thelocations of the dummy select gate electrode 708 and the dummytransistor gate electrodes 709 to 714 may remain in the semiconductorstructure 700 and may form a select gate insulation layer 808, a selectgate electrode 801, transistor gate insulation layers 809 to 814 andtransistor gate electrodes 802 to 807 having features similar to thoseof the select gate electrode 601, the select gate insulation layer 608,the transistor gate electrodes 602 to 607 and the transistor gateinsulation layers 609 to 617 described above with reference to FIGS. 6aand 6 b.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is therefore evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Accordingly, the protection sought herein is as set forth inthe claims below.

What is claimed:
 1. A semiconductor structure, comprising: a split gatenonvolatile memory cell comprising an active region, a nonvolatilememory stack provided above said active region, a control gate electrodeprovided above said nonvolatile memory stack, a select gate electrode atleast partially provided above said active region adjacent to saidnonvolatile memory stack and a select gate insulation layer; and a highvoltage transistor comprising an active region, a gate electrode and agate insulation layer provided between said active region and said gateelectrode; wherein said select gate insulation layer of said split gatenonvolatile memory cell and said gate insulation layer of said highvoltage transistor are at least partially formed of a same high-kdielectric material; and wherein said select gate electrode of saidsplit gate nonvolatile memory cell and said gate electrode of said highvoltage transistor are at least partially formed of a same metal.
 2. Thesemiconductor structure of claim 1, wherein said select gate insulationlayer comprises a first portion arranged between said active region ofsaid split gate nonvolatile memory cell and said select gate electrodeand a second portion arranged between said select gate electrode andsaid control gate electrode.
 3. The semiconductor structure of claim 2,wherein each of said select gate insulation layer of said split gatenonvolatile memory cell and said gate insulation layer of said highvoltage transistor comprises a first gate insulation layer arrangementcomprising one or more sub-layers, wherein, for each of the sub-layersof said first gate insulation layer arrangement of said select gateinsulation layer there is a corresponding sub-layer formed of a samematerial in said gate insulation layer of said high voltage transistor.4. The semiconductor structure of claim 3, wherein the correspondingsub-layers of said first gate insulation layer arrangements of saidselect gate insulation layer of said split gate nonvolatile memory celland said gate insulation layer of said high voltage transistor arearranged in the same order.
 5. The semiconductor structure of claim 4,wherein the corresponding sub-layers of said first gate insulation layerarrangements of said select gate insulation layer of said split gatenonvolatile memory cell and said gate insulation layer of said highvoltage transistor have substantially the same thickness.
 6. Thesemiconductor structure of claim 5, wherein said gate insulation layerof said high voltage transistor further comprises a layer of adielectric material arranged between said first gate insulation layerarrangement and said active region of said high voltage transistor. 7.The semiconductor structure of claim 6, wherein said layer of dielectricmaterial arranged between said first gate insulation layer arrangementand said active region of said high voltage transistor is formed ofsilicon dioxide.
 8. The semiconductor structure of claim 3, furthercomprising a plurality of low voltage transistors, each of saidplurality of low voltage transistors comprising an active region, a gateelectrode provided above said active region and a gate insulation layercomprising a second gate insulation layer arrangement comprising one ormore sub-layers, wherein, for each of said sub-layers, there is acorresponding sub-layer in said first gate insulation layer arrangementsof said select gate insulation layer of said split gate nonvolatilememory cell and said gate insulation layer of said high voltagetransistor, and wherein said gate electrodes of said low voltagetransistors, said select gate electrode of said split gate nonvolatilememory cell and said gate electrode of said high voltage transistor areat least partially formed of the same material.
 9. The semiconductorstructure of claim 7, wherein said plurality of low voltage transistorscomprises a core transistor and an input/output transistor.
 10. Thesemiconductor structure of claim 1, wherein substantially no portion ofsaid nonvolatile memory stack is provided between said select gateelectrode and said control gate electrode.
 11. The semiconductorstructure of claim 10, wherein said select gate electrode comprises afirst portion provided adjacent to said control gate electrode and asecond portion provided above said control gate electrode.
 12. Asemiconductor structure, comprising: a split gate nonvolatile memorycell comprising an active region, a nonvolatile memory stack providedabove said active region, a control gate electrode provided above saidnonvolatile memory stack, a select gate electrode at least partiallyprovided above said active region adjacent to said nonvolatile memorystack and a select gate insulation layer; and a high voltage transistorcomprising an active region, a gate electrode and a gate insulationlayer provided between said active region and said gate electrode;wherein said select gate insulation layer of said split gate nonvolatilememory cell and said gate insulation layer of said high voltagetransistor are at least partially formed of a same high-k dielectricmaterial, each of said select gate insulation layer of said split gatenonvolatile memory cell and said gate insulation layer of said highvoltage transistor comprises a first gate insulation layer arrangementcomprising one or more sub-layers, wherein, for each of said sub-layersof said first gate insulation layer arrangement of said select gateinsulation layer there is a corresponding sub-layer formed of a samematerial in said gate insulation layer of said high voltage transistor,and wherein said gate insulation layer of said high voltage transistorfurther comprises a layer of a dielectric material arranged between saidfirst gate insulation layer arrangement and said active region of saidhigh voltage transistor; and wherein said select gate electrode of saidsplit gate nonvolatile memory cell and said gate electrode of said highvoltage transistor are at least partially formed of a same metal. 13.The semiconductor structure of claim 12, wherein said select gateinsulation layer comprises a first portion arranged between said activeregion of said split gate nonvolatile memory cell and said select gateelectrode and a second portion arranged between said select gateelectrode and said control gate electrode.
 14. The semiconductorstructure of claim 12, further comprising a plurality of low voltagetransistors, each of said plurality of low voltage transistorscomprising an active region, a gate electrode provided above said activeregion and a gate insulation layer comprising a second gate insulationlayer arrangement comprising one or more sub-layers, wherein, for eachof said sub-layers, there is a corresponding sub-layer in said firstgate insulation layer arrangements of said select gate insulation layerof said split gate nonvolatile memory cell and said gate insulationlayer of said high voltage transistor, and wherein said gate electrodesof said low voltage transistors, said select gate electrode of saidsplit gate nonvolatile memory cell and said gate electrode of said highvoltage transistor are at least partially formed of a same material. 15.The semiconductor structure of claim 14, wherein said plurality of lowvoltage transistors comprise a core transistor and an input/outputtransistor.
 16. The semiconductor structure of claim 12, whereinsubstantially no portion of said nonvolatile memory stack is providedbetween said select gate electrode and said control gate electrode. 17.The semiconductor structure of claim 12, wherein said layer ofdielectric material arranged between said first gate insulation layerarrangement and said active region of said high voltage transistor isformed of silicon dioxide.
 18. The semiconductor structure of claim 12,wherein said select gate electrode comprises a first portion providedadjacent to said control gate electrode and a second portion providedabove said control gate electrode.